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patentbuddy: JOERG LINZ
APPLIED MATERIALS, INC., Dresden, DE
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CN B - 具有用于间距倍增的间隔物的掩膜图案及其形成方法 Google Patents
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US A1 * Joerg Linz Self-aligned dual patterning integration scheme. WO A1 * 東京 ...
US A - Method of formation of an air gap within a semiconductor...
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Method of formation of an air gap within a semiconductor dielectric by solvent desorption ... Joerg Linz: Method for forming feature definitions: US *
SELF-ALIGNED DUAL PATTERNING INTEGRATION SCHEME - Patent application
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Patent application title: SELF-ALIGNED DUAL PATTERNING INTEGRATION SCHEME Inventors: Joerg Linz (Dresden, DE) IPC8 Class: AH01L21311FI USPC Class:
Linz, DE - Patent applications
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Joerg Linz, Dresden DE. Patent application number, Description, Published , SELF-ALIGNED DUAL PATTERNING INTEGRATION SCHEME - A ...
JP A - 特徴画成部を形成する方法 Google Patents
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Other languages: English: Japanese; Inventor: Joerg Linz: リンツ ジョエルグ; Original Assignee: Applied Materials Inc: アプライド マテリアルズ ...
US A1 - Method of manufacturing air gap in multilevel...
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A method for forming a semiconductor device having air regions, the method comprises providing a base, forming a pattern of metal leads, depositing a...
US B2 - System and method for self-aligned dual patterning...
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A system and a method for self-aligned dual patterning are described. The system includes a platform for supporting a plurality of process chambers. An...
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